Method for producing semiconductor optical device

Details Method for producing semiconductor optical device Method for producing semiconductor optical device

2006-12-11

2008-11-25

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

C438S040000, C257S623000, C257S627000, C257S628000

Reexamination Certificate

active

07456040

ABSTRACT:
The present invention is to provide a method for manufacturing a semiconductor optical device, in which the unevenness of the burying of the mesa structure may be reduced. The process is configured to form a mask extending along [011] direction on the cap layer, to form a mesa structure by etching the upper cladding layer made of InP, the active region, and the lower cladding layer, to form a surfaces with the (01-1) and the (0-11) planes on both sides of the mesa structure, respectively, by causing the mass transportation, and finally to form the blocking layer by using the mask formed in advance. A semiconductor region with the second conduction type, which is the same with that of the upper cladding layer and is different from that of the lower cladding layer, is grown on the upper cladding layer after removing the mask and the cap layer.

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