Method for producing semiconductor light-emitting device with un

Details Method for producing semiconductor light-emitting device with un Method for producing semiconductor light-emitting device with un

1998-12-04

2000-06-13

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438478, H01L 2100

Patent

active

060748893

ABSTRACT:
A semiconductor light-emitting device includes: a semiconductor substrate of a first conductive type, and a multilayered structure formed on the semiconductor substrate. The multilayered structure includes a first cladding layer of the first conductive type, an undoped active layer, a second cladding layer of a second conductive type, and a current diffusing layer of the second conductive type which are subsequently deposited. An undoped spacer layer is provided between the undoped active layer and the second cladding layer.

REFERENCES:
patent: 5048035 (1991-09-01), Sugawara et al.
patent: 5153889 (1992-10-01), Sugawara et al.
patent: 5299216 (1994-03-01), Van Der Poel
patent: 5466950 (1995-11-01), Sugawara et al.
patent: 5537433 (1996-07-01), Watanabe
patent: 5578839 (1996-11-01), Nakamura et al.
patent: 5610413 (1997-03-01), Fan et al.
patent: 5639674 (1997-06-01), Nozaki et al.

Affiliated with

Also associated with

Rating

Method for producing semiconductor light-emitting device with un does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing semiconductor light-emitting device with un, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing semiconductor light-emitting device with un will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2067775