Method for producing semiconductor light emitting device

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427 50, 427133, 427 23, 372 44, 372 46, 357 17, H01L 2120, H01L 21203, H01L 21265, H01L 2130

Patent

active

051496704

ABSTRACT:
A method of producing a semiconductor light emitting device includes forming a stripe-shaped mesa on a surface of a semiconductor substrate; epitaxially growing a multiple layer structure including at least a first cladding layer, an active layer, a second cladding layer, and a cap layer so that the active layer and cap layer have mesas corresponding to the mesa of the substrate; depositiong photoresist on the cap layer to form a flattened surface; removing the photoresist to expose the mesa of the cap layer; removing a portion of the cap layer using the photoresist remaining on the cap layer as a mask to make the surface of the cap layer approximately flat; depositing a thin film to be used as a mask for proton or ion bombardment on the cap layer and on the remaining photoresist; removing the remaining photoresist and the thin film on the remaining photoresist; and bombarding the cap layer with protons and ions using the remaining thin film on the cap layer as a mask to produce higher resistivity regions adjacent the remaining thin film than directly below the remaining thin film. Therefore, highly reliable semiconductor laser devices having good and uniform characteristics can be realized.

REFERENCES:
patent: 4433417 (1984-02-01), Burnham et al.
patent: 4523961 (1985-06-01), Hartman et al.
patent: 4546480 (1985-10-01), Burnham et al.
patent: 4728628 (1988-03-01), Fiddyment et al.
Dyment et al., "Proton-Bombardment Formation Of Stripe-Geometry Heterostructure Laser For 300 K CW Operation", Proceedings of the IEEE, Jun. 1972, pp. 726-728.
Scifres et al., "Mesa Waveguide GaAs/GaAlAs Injection Laser Grown By Metalorganic Chemical Vapor Deposition", Applied Physics Letters, Jun. 1981, pp. 915-917.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for producing semiconductor light emitting device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing semiconductor light emitting device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing semiconductor light emitting device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1068155

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.