Method for producing semiconductor laser device with high growth

Details Method for producing semiconductor laser device with high growth Method for producing semiconductor laser device with high growth

1998-03-09

1999-12-14

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438329, 438 41, H01L 2120

Patent

active

060016655

ABSTRACT:
The present invention provides a method for producing a semiconductor laser device having at least a light emitting section, a cap layer and an electrode successively formed on a semiconductor substrate, the light emitting section including a light emitting layer located approximately in a middle of a thickness of the device. The method includes the step of growing the light emitting section and the cap layer using a vapor phase epitaxy method, wherein a growth rate of the cap layer is greater than a growth rate of the light emitting section.

REFERENCES:
patent: 5190891 (1993-03-01), Yokotsuka et al.
Tanaka et al., Japanese Laid-Open Publication No. 6-77592, Laid open on Mar. 18, 1994 and English abstract thereof.
Morimoto et al., Japanese Laid-open Publication No. 8-32170, Laid open on Feb. 2, 1996 and English abstract thereof.
Ishibashi et al., Japanese Laid-Open Publication No. 6-188506, Laid open on Jul. 8, 1994 and English abstract thereof.

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