Method for producing semiconductor laser

Details Method for producing semiconductor laser Method for producing semiconductor laser

1998-08-10

2000-08-29

Tsai, Jey

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

438 22, H01L 2120

Patent

active

061107565

ABSTRACT:
The semiconductor laser of the invention includes: a semiconductor substrate of a first conductivity type; a stripe-shaped multilayer structure, formed on the semiconductor substrate, the stripe-shaped multilayer structure including an active layer; and a current blocking portion formed on the semiconductor substrate on both sides of the stripe-shaped multilayer structure, wherein the current blocking portion has a first current blocking layer of a second conductivity type, and a second current blocking layer of the first conductivity type formed on the first current blocking layer, the first current blocking layer includes a low-concentration region having a relatively low concentration of an impurity of the second conductivity type, and a high-concentration region having an impurity concentration which is higher than that of the low-concentration region, and the low-concentration region is provided at a position closer to the stripe-shaped multilayer structure than the high-concentration region.

REFERENCES:
patent: 4994143 (1991-02-01), Kim
patent: 5089437 (1992-02-01), Shima et al.
patent: 5093278 (1992-03-01), Kamei
patent: 5143863 (1992-09-01), Ohnaka et al.
patent: 5214662 (1993-05-01), Irikawa et al.
patent: 5227015 (1993-07-01), Fujihara et al.
patent: 5242857 (1993-09-01), Cooper et al.
patent: 5272109 (1993-12-01), Motoda
patent: 5316967 (1994-05-01), Kaneno et al.
patent: 5319657 (1994-06-01), Otsuka et al.
patent: 5356832 (1994-10-01), Mori et al.
patent: 5390205 (1995-02-01), Mori et al.
patent: 5420066 (1995-05-01), Shima et al.
patent: 5452315 (1995-09-01), Kimura et al.
patent: 5805630 (1998-09-01), Valster et al.
A.W. Nelson et al., "The Role of MOVPE in the Manufacture of High Performance InP Based Optoelectronic Devices", Journal of Crystal Growth 93, pp. 792-802 (1988).
K. Uomi et al., "Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers", Japanese Journal of Applied Physics, vol. 29, No. 1, pp. 88-94 (Jan. 1990) .

Affiliated with

Also associated with

Rating

Method for producing semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing semiconductor laser will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1249030