Method for producing semiconductor laser

Details Method for producing semiconductor laser Method for producing semiconductor laser

1987-03-16

1988-07-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

372 45, 372 46, 372 48, 372 50, 156647, 357 17, H01L 2120, H01L 21203, H01L 21205

Patent

active

047585358

ABSTRACT:
A method for producing a semiconductor laser of InGaAsP/InP type having a structure, in which an active layer isolated from outside is embedded in a groove in a substrate wafer, which comprises steps of: forming the groove in the substrate having a crystallographic plane of (100), on the upper surface of which a current blocking layer has been formed, along the <011> direction of the substrate, in a manner to be terminated at both sides of substrate wafer in the vicinity of the end faces of a laser resonator; and, thereafter, sequentially forming on the groove and other regions of the substrate clad layers and the active layer.

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