Method for producing semiconductor integrated circuit device

Details Method for producing semiconductor integrated circuit device Method for producing semiconductor integrated circuit device

1990-02-07

1990-10-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 34, 437 59, 437 48, 437 52, 357 34, 357 43, 357 42, H01L 21265

Patent

active

049620525

ABSTRACT:
A method for producing a memory LSI having in its peripheral circuitry an MISFET of LDD structure and a vertical type bipolar transistor is disclosed. More particularly, an impurity for forming a low impurity concentration region of the said MISFET of LDD structure is introduced sideways of an emitter-base junction of the bipolar transistor. By the introduction of the said impurity, an effective impurity concentration near the base surface is reduced and the cut-off frequency of the bipolar transistor is improved.

REFERENCES:
patent: 3576475 (1971-04-01), Kronlage
patent: 4047217 (1977-09-01), McCaffrey
patent: 4475279 (1984-10-01), Gahle
patent: 4717686 (1988-01-01), Jacobs

Affiliated with

Also associated with

Rating

Method for producing semiconductor integrated circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing semiconductor integrated circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing semiconductor integrated circuit device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-973217