Method for producing semiconductor films

Details Method for producing semiconductor films Method for producing semiconductor films

1981-04-03

1983-03-15

O'Keefe, Veronica

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204192P, 136258, C23C 1500

Patent

active

043766889

ABSTRACT:
A method for producing semiconducting films on a substrate wherein a plasma of a reactive gas is generated and an ion beam from the plasma is directed and accelerated toward a target of material of which the film is to be formed. The target which is maintained in a vacuum chamber at reduced pressure, is sputtered with the reactive ion beam and the material sputtered off the target is collected as a film on a substrate which is physically isolated from the plasma generating process and the sputtering process. Preferably the reactive gas is present in a mixture with an inert gas heavier than the reactive gas.

REFERENCES:
patent: 3494852 (1970-02-01), Doctoroff
G. P. Ceasar, S. F. Grimshaw and K. O. Kumura, Solid State Communications, vol. 38, No. 2, pp. 89-93, Apr. 1981.
Ishii et al., Jpn., J. Appl. Phys, vol. 18, (1979), No. 7, pp. 1395-1396.
H. J. Stein et al., Appl. Phys. Lett., 34(9), 1 May 1979, pp. 604-609.
Shimada et al., J. Appl. Phys., 50(8), Aug. 1979, pp. 5530-5532.
Weissmantel et al., Thin Solid Films, 72(1980), 19-31.

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