Method for producing semiconductor film

Details Method for producing semiconductor film Method for producing semiconductor film

1992-07-13

1994-05-10

Chaudhuri, Olik

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Liquid phase epitaxial growth

148DIG93, 437 86, 437174, 117 54, 117934, 117923, C30B 2500

Patent

active

053104463

ABSTRACT:
A method for producing a semiconductor film comprising steps of: preparing a first substrate and a second substrate; superposing the first substrate on the second substrate to form an assembly of combined substrates; applying energy to the assembly of combined substrates to melt a portion within the assembly to form a molten portion therein; cooling the molten portion to crystallize the portion to form a single crystal structure therein; and separating the first substrate from the second substrate. The method makes it possible to control the crystal axis orientation of the recrystallized single crystal structure.

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