Method for producing semiconductor devices and cutting fuses

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437922, H01L 21465, H01L 21473

Patent

active

047957204

ABSTRACT:
Herein disclosed are a method of producing a semiconductor device. Especially in a device constructed to have a defective circuit replaced by a redundant circuit, after a fuse is cut by exposure to a laser beam, a portion to be fused is irradiated in a predetermined gas atmosphere with an optical ray to selectively form a CVD film thereby to form a protection film over the fuse so that the formation of the protection film is simplified after the fuse is cut, whereby any rise in the production cost is suppressed while improving the production yield and reliability.

REFERENCES:
patent: 4240094 (1980-12-01), Mader
patent: 4455194 (1984-06-01), Yabu et al.
patent: 4503315 (1985-03-01), Kamioka et al.
patent: 4569121 (1986-02-01), Lim et al.
patent: 4602420 (1986-07-01), Saito
Baurle, `Laser Induced Chemical Vapor Deposition`, Surface Studies with Lasers, Proc. of International Conf. Mauterndof Austria, Mar. 1983, pp. 178-188.
Chang, `Writing SiO.sub.2 on a Si Wafer`, IBM Tech. Bulletin, vol. 20, No. 6, Nov. 77.
Boyer et al., `Laser-Induced Chemical Vapor Deposition of SiO.sub.2 `, Applied Physics Letters, vol. 40, No. 8, Apr. 82, pp. 716-719.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for producing semiconductor devices and cutting fuses does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing semiconductor devices and cutting fuses, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing semiconductor devices and cutting fuses will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2168396

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.