Fishing – trapping – and vermin destroying
Patent
1994-05-25
1995-05-16
Fourson, George
Fishing, trapping, and vermin destroying
437 28, 437 34, H01L 2170
Patent
active
054160383
ABSTRACT:
A semiconductor MOSFET device manufactured by a process starting with a doped semiconductor substrate with a P-well and an N-well and field oxide structures on the surface of the P-well and the N-well separating the surfaces of the P-well and the N-well into separate regions and a silicon dioxide film on the remainder of the surface of the P-well and the N-well comprising the steps as follows: forming a mask over the N-well and an under sized mask over one of the separate regions of the P-well performing a field ion implantation of V.sub.t ' ions into the P-well, removing the mask over the portion of the P-well, performing a blanket ion implantation of V.sub.t1 ions over the entire device.
REFERENCES:
patent: 4745083 (1988-05-01), Huic
patent: 5015595 (1991-05-01), Wollesen
patent: 5024960 (1991-06-01), Haken
patent: 5091324 (1992-02-01), Hsu et al.
patent: 5190888 (1983-03-01), Schwalke et al.
patent: 5272097 (1993-12-01), Shiota
Chien Sun-Chieh
Hsue Chen-Chiu
Wu Tzong-Shien
Yuan Lee C.
Fourson George
Jones II Graham S.
Mason David
Saile George O.
United Microelectronics Corporation
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