Method for producing semiconductor device with p-type amorphous

Details Method for producing semiconductor device with p-type amorphous Method for producing semiconductor device with p-type amorphous

1986-07-21

1988-07-05

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

136258, 427 541, 437101, H01L 21205

Patent

active

047554835

ABSTRACT:
A method for producing a semiconductor device uses trimethyl boron (B(CH.sub.3).sub.3) of triethyl boron (B(C.sub.2 H.sub.5).sub.3) or a mixture thereof as a p-type dopant and/or a band gap widening source material gas in a process for forming a p-type amorphous semiconductor film. Accordingly, the quantity and the number of different gases which are used can be reduced and also the photoconductivity and dark conductivity can be improved, whereby a semiconductor device suitable for photovoltaic cells, photo sensors and the like using a p-type amorphous semiconductor film having a wide optical band gap can be produced.

REFERENCES:
patent: 4385199 (1983-05-01), Hamakawa et al.
patent: 4585671 (1986-04-01), Kitagawa et al.
T. Inoue et al., Appl. Phys. Lett., vol. 44, pp. 871-873, (1984).
Y. Mishima et al., J. Appl. Phys., vol. 56, pp. 2803-2805, (1984).
SPC 84-48, Research Meeting, Society of Electricity, pp. 11-20.

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