Method for producing semiconductor device with multilayer leads

Details Method for producing semiconductor device with multilayer leads Method for producing semiconductor device with multilayer leads

1993-06-30

1994-06-21

Quach, T. N.

Fishing, trapping, and vermin destroying

437195, 437200, 437918, 437978, H01L 21283

Patent

active

053228154

ABSTRACT:
A semiconductor device having multi-layered leads having a first lead portion including a polycrystalline silicon layer and a titanium silicide layer, and a second lead portion formed over the first lead portion and made up of a polycrystalline silicon layer. An intermediate insulating layer is provided between the first and second lead portions. The intermediate insulation layer and the underlying titanium silicide layer are provided with contact holes aligned with each other so as to allow the polycrystalline silicon of the second lead portion to be in direct contact with the polycrystalline silicon layer of the first lead portion without interposing therebetween the titanium silicide layer at the contact hole portion.

REFERENCES:
patent: 4292730 (1981-10-01), Ports
patent: 4604789 (1986-08-01), Bourassa
patent: 4849344 (1989-07-01), Desbiens et al.
patent: 4968645 (1990-11-01), Baldi et al.
patent: 5013678 (1991-05-01), Winnerl et al.
Wolf, et al., Silicon Processing, Lattice Press, 1986, vol. 1, pp. 384-400.

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