Metal working – Barrier layer or semiconductor device making
Patent
1993-05-24
1994-09-13
Chaudhuri, Olik
Metal working
Barrier layer or semiconductor device making
118730, 118733, C23C 1600, H01L 21306, H01L 2168
Patent
active
053465130
ABSTRACT:
A method for manufacturing a semiconductor device using an apparatus including a processing chamber having an opening and capable of being vacuum sealed, a carrier member including a substrate holder, an arm member, and a substrate carrier which vertically reciprocates in the opening of the processing chamber. A vacuum bellows is divided into an upper bellows and a lower bellows that are attached to a hollow flange therebetween. The upper bellows is a double structure having an inner bellows and an outer bellows. An air inlet is formed in the hollow flange and air is introduced through the inlet into a ring-shaped space between the inner bellows and the outer bellows.
REFERENCES:
patent: 4045181 (1977-10-01), Burd et al.
patent: 4213051 (1980-07-01), Struthoff et al.
patent: 4360499 (1982-11-01), Gubitose et al.
patent: 5100502 (1992-03-01), Murdoch et al.
Satou Hiroshi
Taniguchi Takao
Chaudhuri Olik
Graybill David E.
Mitsubishi Denki & Kabushiki Kaisha
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