Method for producing semiconductor device substrate by bonding a

Details Method for producing semiconductor device substrate by bonding a Method for producing semiconductor device substrate by bonding a

1995-01-06

1996-02-20

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437101, 437974, H01L 2120

Patent

active

054928591

ABSTRACT:
A process for producing a semiconductor device substrate comprises the steps of making a first substrate member porous, forming an insulating layer on a second substrate member, forming an amorphous layer on the insulating layer on the second substrate member, bonding the porous first substrate member to the amorphous layer at a temperature of an atmosphere in which the amorphous layer at least does not crystallize, causing solid-phase epitaxial growth of the amorphous layer by utilizing the porous first substrate member as crystal growth seed, and removing the bonded first substrate member after completion of the epitaxial growth by chemical etching.

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