Method for producing semiconductor device including a refractory

Details Method for producing semiconductor device including a refractory Method for producing semiconductor device including a refractory

1989-04-28

1990-09-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437201, 437173, 437245, 437946, 148DIG90, 148DIG71, 427 531, H01L 21283, H01L 21268

Patent

active

049578804

ABSTRACT:
In the production method of a semiconductor device, a connection layer is formed on an insulating layer according to two steps of irradiating, in the atmosphere of a reaction gas, a region in which the connection layer is to be formed selectively by light having a wavelength in a range of from 200 to 1000 nm, and depositing selectively a connection layer forming substrate by a CVD method in the light irradiated region until a desired thickness of the substance is obtained.

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