Method for producing semiconductor device and semiconductor devi

Details Method for producing semiconductor device and semiconductor devi Method for producing semiconductor device and semiconductor devi

1990-01-11

1991-09-24

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 41, 437247, 437248, 437912, 437487, 437184, 156605, H01L 21265, H01L 21324

Patent

active

050513761

ABSTRACT:
A method for producing a semiconductor device comprises the steps of: preparing a III.sub.b -V.sub.b group compound single crystalline semiconductor substrate produced by a liquid encapsulated Czochralski process, the single crystalline semiconductor substrate having a carbon concentration of 1.times.10.sup.15 cm.sup.-3 or less, implanting conductive impurity ions into the single crystalline semiconductor substrate and then annealing, and a semiconductor device produced by this method.

REFERENCES:
patent: H291 (1987-06-01), Boos
patent: 4158851 (1979-06-01), Akai et al.
patent: 4233613 (1980-11-01), Morimoto
patent: 4505023 (1985-03-01), Tseng et al.
patent: 4528061 (1985-07-01), Miyazawa et al.
patent: 4544417 (1985-10-01), Clarke et al.
patent: 4594173 (1986-06-01), Hobgood
patent: 4595423 (1986-06-01), Miyazawa et al.
patent: 4602965 (1986-07-01), McNally
patent: 4636280 (1987-01-01), Nakai et al.
patent: 4713354 (1987-12-01), Egawa et al.
patent: 4738934 (1988-04-01), Johnston, Jr. et al.
patent: 4752592 (1988-06-01), Tamura et al.
patent: 4759822 (1988-07-01), Vetanen et al.
Kirkpatrick et al., "Growth of Bulk GaAs", in Gallium Arsenide edited by Howes and Morgan, John Wiley & Sons, Inc., 8/29/85.
Molnar et al., "Comparison of Heat-Pulse and Furnace Isothermal Anneals of Be Implanted InP", in Ion Implantation and Ion Beam Processing of Materials, edited by Hubler, Holland, Clayton and White, Elsevier Science Publishing Co., Inc, 1984.
Miyazaki et al., "Implantation of Silicon Into Gallium Arsenide", in Ion Implantation in Semiconductors Science and Technology, edited by Namba, Plenum Press, 1975.
Bonnet et al., "Homogeneity of Lec Semi-Insulating GaAs Wafers for IC Applications", GaAs IC Symposium, IEEE Gallium Arsenide Integrated Circuit Symposium, Technical Digest, 1982, pp. 54-57.
Takebe et al., "Characterization of In-Mixed Dislocation Free GaAs Crystals for IC Application", Inst. Phys. Conf. Ser. No. 79: Chapter 4, Paper presented at Int. Symp. GaAs and Related Compounds, Karvizawa, Japan, 1985, pp. 283-300.
Gray et al., "The Role of Crystal-Growth Properties on Silicon Implant Activation Processes for GaAs", J. Appl. Phys., vol. 64, No. 3, Aug. 1, 1988, pp. 1464-1467.
Inada et al., "Ion Implantation in In-Doped, Semi-Insulating Gallium Arsenide", Nuclear Instruments and Methods in Physics B19/20 (1987), pp. 413-417.
Barrett et al., "Large Diameter Bulk GaAs Material for Microwave Device Technology", Proceedings of the Fourth Biennial University/Government/Industry Microelectronics Symposium, 1981, pp. XI 29-36.
Ta et al., "Reproducibility and Uniformity Considerations in LeC Growth of Undoped, Semi-Insulating GaAs for Large-Area Direct Implanation Technology", Inst. Phys. Conf. Ser. No. 65: Chapter 1; Paper presented at Int. Symp. GaAs and Related Compounds, Albuquerque, 1982, pp. 31-39.

Affiliated with

Also associated with

Rating

Method for producing semiconductor device and semiconductor devi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing semiconductor device and semiconductor devi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing semiconductor device and semiconductor devi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1696495