Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Walled emitter
Patent
1999-01-14
2000-11-28
Pham, Long
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Walled emitter
438344, 438347, 438348, 438349, 438350, H01L 21331
Patent
active
061534889
ABSTRACT:
A method for producing a semiconductor device including a bipolar transistor, has the steps of: forming an element isolating region in a major surface of a semiconductor substrate to define an element forming region to form a collector region in the element forming region surrounded by the element isolating region; allowing the epitaxial growth of a semiconductor layer on the major surface of the semiconductor substrate to form a base region of the semiconductor layer on the collector region; forming a growth inhibiting film on a region forming the base region of the semiconductor layer; removing the growth inhibiting film to expose a part of the semiconductor layer; covering the upper surface and side wall of the conductive film, which is exposed in the predetermined region, with an insulator film; covering the side wall of the conductive film, which is exposed in the predetermined region; and forming an emitter region in a surface region of the predetermined region of the semiconductor layer, which is surrounded by the conductive film.
REFERENCES:
patent: 5008208 (1991-04-01), Liu et al.
Kabushiki Kaisha Toshiba
Pham Long
LandOfFree
Method for producing semiconductor device, and semiconductor dev does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for producing semiconductor device, and semiconductor dev, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing semiconductor device, and semiconductor dev will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1725002