Fishing – trapping – and vermin destroying
Patent
1995-01-25
1997-07-01
Niebling, John
Fishing, trapping, and vermin destroying
H01L 21324
Patent
active
056438397
ABSTRACT:
In a rapid thermal processing (RTP) of a large-diameter wafer, a wafer is heat treated by an upper high-temperature furnace and a lower low-temperature furnace, which are separated from and can be brought into close contact with one another by a relative vertical position adjusting means. The upper high-temperature furnace has an open bottom which is shut by an openable, heat insulating shutter. Height of the apparatus as a whole can be shortened.
REFERENCES:
patent: 4857689 (1989-08-01), Lee
patent: 4950870 (1990-08-01), Mitsuhashi et al.
patent: 5043300 (1991-08-01), Nulman
patent: 5232506 (1993-08-01), Kawase
patent: 5252807 (1993-10-01), Chizinsky
patent: 5273585 (1993-12-01), Shoga
patent: 5288326 (1994-02-01), Maeda
patent: 5359693 (1994-10-01), Nenyei
patent: 5387557 (1995-02-01), Takagi
patent: 5388944 (1995-02-01), Takanabe et al.
patent: 5504043 (1996-04-01), Ngan et al.
Roozeboom, Fred; Rapid Thermal Processing Systems: A Review with Emphasis on Temperature Control; Jul. 17, 1990.
Singh, R.; School of Electrical Engineering and Computer Science; University of Oklahoma; Rapid Isothermal Processing; Dec. 1, 1987.
F.T.L. Co., Ltd.
Mulpuri S.
Niebling John
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