Method for producing semiconductor device

Details Method for producing semiconductor device Method for producing semiconductor device

2009-05-29

2010-11-02

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Having metal oxide or copper sulfide compound semiconductor...

C257SE21475

Reexamination Certificate

active

07824957

ABSTRACT:
During a process of forming an active layer of a semiconductor device using a ZnO film, the ZnO film is laser-annealed with an ultraviolet pulsed laser to reduce the resistance of the film, and then oxidation treatment is applied to increase the specific resistance value at a channel portion of the ZnO film, which once has excessively low resistance after the laser annealing, to 103Ω·cm or more.

REFERENCES:
patent: 05-330823 (1993-12-01), None
patent: 2007-142196 (2007-06-01), None
Chiu, T., Tonooka, K., & Kikuchi, N. (2008). Fabrication of ZnO and CuCrO-2:Mg thin films by pulsed laser deposition with in situ laser annealing and its application to oxide diodes. Thin Solid Films, 516(18), doi: http:/dx.doi.org/10.1016/j.tsf.2007.10.067.

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