Method for producing semiconductor device

Details Method for producing semiconductor device Method for producing semiconductor device

2006-12-05

2009-06-02

Cao, Phat X (Department: 2813)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S458000, C257SE21088

Reexamination Certificate

active

07541262

ABSTRACT:
The present invention contemplates preventing clogging of a dicer for forming separation trenches in a semiconductor wafer, and as well improving the yield of a semiconductor device cut out of the semiconductor wafer. A second adhesive to be charged into spaces contains an epoxy material as a base material. Silica filler particles (diameter: about 2 to about 4 μm) are added to the base material in an appropriate amount. Charging of the second adhesive may be performed by adding the adhesive dropwise to a side wall of a semiconductor wafer, or by immersing an edge of the semiconductor wafer in the adhesive in the form of liquid. When a liquid-form epoxy material of low viscosity is employed, the spaces can be evenly filled with the second adhesive by capillary action. An n-electrode is formed on an exposed surface of an n-type layer through vapor deposition employing a resist mask. Separation trenches are formed through half-cut dicing from the exposed surface of the n-type layer toward the second adhesive.

REFERENCES:
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patent: 7183645 (2007-02-01), Kurosawa et al.
patent: 2006/0244001 (2006-11-01), Lee et al.
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German Office Action dated Nov. 26, 2007.
Testsuo Fujii, et al., “Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique”, Japanese Journal of Applied Physics, vol. 43, No. 3B, 2004, pp. L411-L413.

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