Method for producing semiconductor device

Details Method for producing semiconductor device Method for producing semiconductor device

1995-09-26

1996-07-09

Thomas, Tom

Fishing, trapping, and vermin destroying

437 41, 437234, 437912, H01L 218232

Patent

active

055344526

ABSTRACT:
A method for producing a semiconductor device includes preparing a semi-insulating substrate having an active layer, depositing a first insulating film on the active layer and forming two first openings in the first insulating film, depositing a second insulating film on the first insulating film filling the first openings and make a flat surface with the surface of the first insulating film, removing a portion of the first insulating film between the first openings to form a second opening, etching the active layer through the second opening formed by the removal of the first insulating film, removing parts of the second insulating film on opposite sides of the first insulating film from the active layer to form a third opening, and etching the active layer through the third opening formed by removal of the second insulating film to form a double-stage recess. The widths of the first and second stage recesses are determined by the pattern of the first insulating film and the patterns of the first and second insulating films, respectively, so that only one alignment step is sufficient and the positions and the widths of the recess are easily controlled, enhancing the degree of freedom in the recess width.

REFERENCES:
patent: 4616400 (1986-10-01), Macksey et al.
patent: 5006478 (1991-04-01), Kobayashi et al.
patent: 5240869 (1993-08-01), Nakatani

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