Method for producing semiconductor device

Details Method for producing semiconductor device Method for producing semiconductor device

1993-05-03

1994-11-08

Thomas, Tom

Fishing, trapping, and vermin destroying

437133, 437160, 437192, 437200, 148DIG11, H01L 21265

Patent

active

053626583

ABSTRACT:
A method for producing a semiconductor device includes growing a collector layer, a base layer, and an emitter layer on a substrate; forming an emitter electrode, a tungsten film, and a silicon film services as an etching stopper on a prescribed region of the emitter layer; etching the emitter layer using the above-described films as a mask to expose the base layer; forming side walls on opposite side surfaces of the silicon film, tungsten film, emitter electrode, and emitter layer; forming a zinc oxide layer serving as an impurity diffusion source on the base layer and performing a diffusion to produce high purity concentration regions in the base layer; removing the zinc oxide layer by wet etching using hydrofluoric acid as an etchant; depositing a base metal on the base layer and removing an unnecessary portion of the base metal by ion milling for form base electrodes; selectively removing the silicon film; and forming an electrode in contact with the tungsten film. Since the silicon film is not etched by hydrofluoric acid when the zinc oxide layer is removed, the emitter electrode is not adversely affected by the ion milling in removing the base metal, resulting in an HBT with a reliable emitter electrode.

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