Method for producing semiconductor device

Details Method for producing semiconductor device Method for producing semiconductor device

1992-11-12

1994-05-31

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437107, 437126, 437129, 437133, 437228, 372 43, 372 96, H01L 2120

Patent

active

053169670

ABSTRACT:
In a method for producing a semiconductor device, a first semiconductor layer is epitaxially grown on a semiconductor substrate, an insulating film pattern is formed on the first semiconductor layer, and portions of the first semiconductor layer are removed by wet etching using the insulating film pattern as a mask to leave a ridge having a reverse mesa shape and a width. Ends of the insulating film pattern are removed by etching to approximately the width of the ridge, a second semiconductor layer is epitaxially grown on opposite sides of the ridge, and a third semiconductor layer is epitaxially grown on the ridge and the second semiconductor layer. The second semiconductor layer is evenly grown without concave portions at opposite sides of the ridge. In addition, the third semiconductor layer is evenly grown on the ridge and the second semiconductor layer, and an electrode reliably connects the surface of the third semiconductor layer. A semiconductor device with good performance and high reliability is reproducibly manufactured.

REFERENCES:
patent: 5059552 (1991-10-01), Harder et al.
Mitsubishi Denki Giho, volume 62, No. 11, 1988, pp. 958-961.
Shimoyama et al., "A New Selective MOVPE Regrowth Process Utilizing In-Situ Vapor Phase Etching for Optoelectronic Integrated Circuits", Metalorganic Vapor Phase Epitaxy 1990, pp. 767-771.
Suzuki et al., "Low-Noise Semiconductor Laser for Optical Pick-up", 1985, pp. 576-578.

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