Method for producing semiconductor device

Details Method for producing semiconductor device Method for producing semiconductor device

1996-03-07

1999-03-09

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

216101, 438743, H01L 2100

Patent

active

058800387

ABSTRACT:
After a resist mask is selectivity formed on an upper portion of a gate electrode containing mainly aluminum. At this state an anodization process is performed using an electrolytic solution, to form an anodic oxide film in a region other than a region of the upper portion on which the resist mask is formed. A silicon oxide film is formed to cover the gate electrode or the like Since an anodic oxide film is not formed on the region of the upper portion, contact holes for a wiring or an electrode made of aluminum are formed by etching the silicon oxide film using a hydrofluoric acid system etchant.

REFERENCES:
patent: 5146301 (1992-09-01), Yamamura et al.
patent: 5359206 (1994-10-01), Yamamoto et al.
patent: 5422239 (1995-06-01), Konya
patent: 5576225 (1996-11-01), Zhang et al.
patent: 5580800 (1996-12-01), Zhang et al.
patent: 5581382 (1996-12-01), Kim
patent: 5648826 (1997-07-01), Song et al.

Affiliated with

Also associated with

Rating

Method for producing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1320729