Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reexamination Certificate
2006-11-01
2008-12-02
Hiteshew, Felisa C (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
C117S064000, C117S068000, C117S083000, C117S104000
Reexamination Certificate
active
07459023
ABSTRACT:
The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that of the semiconductor crystal to be grown.
REFERENCES:
patent: 6270569 (2001-08-01), Shibata et al.
patent: 2005/0048686 (2005-03-01), Kitaoka et al.
patent: 11-060394 (1999-03-01), None
patent: 2001-058900 (2001-03-01), None
patent: 2001-064097 (2001-03-01), None
patent: 2004-292286 (2004-10-01), None
patent: 2004-300024 (2004-10-01), None
German Office Action dated Sep. 14, 2007 with English Translation.
Hirata Koji
Imai Katsuhiro
Iwai Makoto
Kawamura Fumio
Mori Yusuke
Hiteshew Felisa C
McGinn IP Law Group PLLC
NGK Insulators Ltd.
Osaka University
Toyoda Gosei Co,., Ltd.
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