Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-05-27
2008-05-27
Tran, Thien F (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S759000, C257SE21232, C257SE21035
Reexamination Certificate
active
07378738
ABSTRACT:
A method for forming a self-aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material being either photo or thermally sensitive; performing a blanket exposure of the substrate; and allowing at least a portion of the masking material to preferential develop in a fashion that is replicates the existing pattern of the substrate. The existing pattern may be comprised of a first set of regions of the substrate having a first reflectivity and a second set of regions of the substrate having a second reflectivity different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. Structures made in accordance with the method.
REFERENCES:
patent: 6448655 (2002-09-01), Babich et al.
patent: 6583043 (2003-06-01), Shroff et al.
patent: 6777807 (2004-08-01), Lu et al.
patent: 2002/0187625 (2002-12-01), Shimooka et al.
Brunner Timothy A.
Colburn Matthew E.
Huang Elbert
Sankarapandian Muthumanickam
International Business Machines - Corporation
Morris, Esq. Daniel P.
Scully , Scott, Murphy & Presser, P.C.
Tran Thien F
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