Method for producing reverse staggered type silicon thin film tr

Details Method for producing reverse staggered type silicon thin film tr Method for producing reverse staggered type silicon thin film tr

1989-05-26

1992-05-19

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

Fishing

Artificial bait

437101, 437 20, 437 21, 357 2, 357 4, 357 237, H01L 21265

Patent

active

051148692

ABSTRACT:
A method for producing a reverse staggered type silicon thin film transistor includes the steps of forming a gate insulating layer on a substrate having a gate electrode, the gate insulating layer having a transistor-forming portion; forming an intrinsic silicon film on the transistor-forming portion of the gate insulating layer; forming an n-type silicon layer on the intrinsic silicon layer; forming a source electrode on the n-type silicon layer; forming a drain electrode on the n-type silicon layer; forming a resist layer on the source electrode and drain electrode and having the same shape thereof; subsequently removing a portion of the n-type silicon layer by using the resist layer as a mask, such that there remains a predetermined thickness of the n-type silicon layer; and doping the predetermined thickness of the n-type silicon layer with p-type impurities by using the resist layer as a mask.

REFERENCES:
patent: 4459739 (1984-07-01), Shepherd et al.
patent: 4704623 (1987-11-01), Piper et al.
patent: 4759610 (1988-07-01), Yanagisawa
patent: 4862234 (1989-08-01), Koden
patent: 4916090 (1990-04-01), Motai et al.

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