Method for producing reverse staggered type silicon thin film tr

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437101, 437 20, 437 21, 357 2, 357 4, 357 237, H01L 21265

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051148692

ABSTRACT:
A method for producing a reverse staggered type silicon thin film transistor includes the steps of forming a gate insulating layer on a substrate having a gate electrode, the gate insulating layer having a transistor-forming portion; forming an intrinsic silicon film on the transistor-forming portion of the gate insulating layer; forming an n-type silicon layer on the intrinsic silicon layer; forming a source electrode on the n-type silicon layer; forming a drain electrode on the n-type silicon layer; forming a resist layer on the source electrode and drain electrode and having the same shape thereof; subsequently removing a portion of the n-type silicon layer by using the resist layer as a mask, such that there remains a predetermined thickness of the n-type silicon layer; and doping the predetermined thickness of the n-type silicon layer with p-type impurities by using the resist layer as a mask.

REFERENCES:
patent: 4459739 (1984-07-01), Shepherd et al.
patent: 4704623 (1987-11-01), Piper et al.
patent: 4759610 (1988-07-01), Yanagisawa
patent: 4862234 (1989-08-01), Koden
patent: 4916090 (1990-04-01), Motai et al.

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