Fishing – trapping – and vermin destroying
Patent
1994-09-13
1996-03-05
Nguyen, Tuan H.
Fishing, trapping, and vermin destroying
437 39, 437175, 437177, 437179, 437184, 437190, 437912, H01L 21265, H01L 21338
Patent
active
054967481
ABSTRACT:
A method for producing a refractory metal gate electrode includes forming a patterning mask layer that is dissolved in a solution including hydrogen ions and having an aperture on a semiconductor substrate; forming a gate metal layer having an ionization potential larger than hydrogen on the entire surface of the patterning mask layer; forming a low resistance metal layer of a predetermined configuration having an ionization potential smaller than hydrogen on the gate metal layer; covering at least an upper surface of the low resistance metal layer with a film that has no reductive reaction with a solution including hydrogen ions; and removing the patterning mask layer using a solution including hydrogen ions after patterning the gate metal layer. An electrolytic reaction of a system including the gate metal layer, the low resistance metal layer, and the solution including hydrogen ions is suppressed by a film covering at least an upper surface of the low resistance metal layer, and localized abnormal dissolution of the gate metal when removing the patterning mask layer using the solution including the hydrogen ions is suppressed.
REFERENCES:
patent: 4213840 (1980-07-01), Omori et al.
patent: 4977100 (1990-12-01), Shimura
patent: 5041393 (1991-08-01), Ahrens et al.
Onodera et al, "A 630-mS/mm GaAs MESFET with Au/WSiN Refractory Metal Gate," IEEE Electron Device Letters, 1988, Aug., 417-418.
Hattori Ryo
Kohno Yasutaka
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Tuan H.
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