Method for producing quantization functional device utilizing a

Details Method for producing quantization functional device utilizing a Method for producing quantization functional device utilizing a

1995-04-13

1996-05-07

Thomas, Tom

Fishing, trapping, and vermin destroying

437100, 437184, 437203, 437904, H01L 21328

Patent

active

055146147

ABSTRACT:
By etching, a first groove and a second groove are formed in a silicon substrate. Surfaces of the side walls of these grooves have a surface orientation of (111). The first and second grooves sandwich a silicon thin plate therebetween, which is formed as a part of the silicon substrate. The silicon thin plate is sufficiently thin so as to act as a quantum well. Further, a pair of silicon oxide films acting as tunneling barriers are formed on the surfaces of the side walls of the silicon thin plate, thus forming a double barrier structure. In addition, a pair of polysilicon electrodes are formed and sandwich the double barrier structure. As a result, the structure of a resonance tunneling diode, which utilizes the resonance tunneling effect, is provided. Adding a third electrode to the above structure provides a hot electron transistor. In the quantization functional devices having the above-described configuration, the satisfactory resonance effect is obtained due to a high crystallinity of the quantum well, a high potential barrier brought by the high quality silicon oxide films used as the tunneling barriers and a smooth interface between the quantum well and the tunneling barriers.

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IBM Technical Disclosure Bulletin, vol. 34, No. 4A, pp. 251-252 (Sep. 1991) .

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