Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2006-05-09
2006-05-09
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S046000
Reexamination Certificate
active
07041519
ABSTRACT:
A second Group III nitride compound semiconductor layer not doped with any impurities or doped with n-type impurities or with n-type and p-type impurities is formed on a first Group III nitride compound semiconductor layer doped with p-type impurities. Resistance is reduced by a heat treatment after or during the formation of the second Group III nitride compound semiconductor layer.
REFERENCES:
patent: 5306662 (1994-04-01), Nakamura et al.
patent: 6020602 (2000-02-01), Sugawara et al.
patent: 6258614 (2001-07-01), Kaneko
patent: 6479313 (2002-11-01), Ye et al.
patent: 6495433 (2002-12-01), Shin
patent: 6537838 (2003-03-01), Stockman
patent: 6562129 (2003-05-01), Hasegawa et al.
patent: 6838705 (2005-01-01), Tanizawa
patent: 6911079 (2005-06-01), Rice et al.
patent: 2002/0068374 (2002-06-01), Sakai
patent: 2002/0157596 (2002-10-01), Stockman et al.
patent: 2003/0132442 (2003-07-01), Chang et al.
patent: 05-183189 (1993-07-01), None
patent: 05-198841 (1993-08-01), None
patent: 08-097471 (1996-04-01), None
Nakamura, et al., “Hole Compensation Mechanism of P-Type GaN Films”, Jpn. J. App. Phys. vol. 31 Part 1, No. 5A, May 1992, pp. 1258-1266.
Amano, et al., “GaN Blue and UV Light Emitting Diodes with a PN Junction”, Oyo Buturi, vol. 60, No. 2, 1991, pp. 163-166.
McGinn IP Law Group PLLC
Nguyen Tuan H.
Toyoda Gosei Co,., Ltd.
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