Method for producing oxide films

Coating processes – Electrical product produced – Metallic compound coating

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Details

4273722, 4273831, 4273833, 427380, 427128, 4272481, B05D 512, B05D 302

Patent

active

052543633

ABSTRACT:
Disclosed is an oxide thin film producing method for producing an oxide thin film having excellent crystallinity and purity with high productivity while correctly controlling the composition of the oxide thin film. After reducing the pressure inside a vacuum chamber to 1.times.10.sup.-9 Torr or less, a metal thin film is formed by evaporating a specified metal element and depositing vapor of the metal element on a substrate in the vacuum chamber. Then a cover member is moved upward to closely abut to a cover receiving member to thereby form an airtight chamber for enclosing the substrate airtightly in the vacuum chamber. With the degree of vacuum around the airtight chamber maintained, O.sub.2 gas is directly introduced into the airtight chamber through a gas piping to oxidize the metal thin film and thereby form an oxide thin film. At the same time, the gas inside the airtight chamber is discharged directly out of the vacuum chamber through a gas piping.

REFERENCES:
patent: 4060448 (1977-11-01), Nemiroff et al.
patent: 4655167, Nakamura et al.
patent: 4763602 (1988-08-01), Madan et al.
"Properties of Reactively-Sputtered Copper Oxide Thin Films" by V. F. Drobny & D. L. Pulfrey, Thin Solid Films, 61(1979) pp. 89-98.

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