Method for producing oriented piezoelectric films

Details Method for producing oriented piezoelectric films Method for producing oriented piezoelectric films

1999-07-29

2000-11-28

Parker, Fred J.

Coating processes

Direct application of electrical, magnetic, wave, or...

Electrostatic charge, field, or force utilized

427100, 427483, B05D 104

Patent

active

061532681

ABSTRACT:
Highly oriented thin films exhibiting good piezoelectric effects are formed in a reaction chamber. This is done by bombarding a target comprising a piezoelectric material. Dislodged particles from the target are ionized and then electrostatically attracted to the surface of a substrate where they are neutralized and deposited in an ordered way.

REFERENCES:
patent: 3988232 (1976-10-01), Wasa et al.
patent: 4309266 (1982-01-01), Nakamura et al.
patent: 5344676 (1994-09-01), Kim et al.
patent: 5948483 (1999-09-01), Kim et al.
S.M. Rossnagel et al, "Metal Ion Deposition from Ionized Magnetron Sputtering Discharge", J. Vac. Sci. Technol, vol. 12, No. 1, Jan./Feb. 1994, pp. 449-453.
S.M. Rossnagel, "Ionized Magnetron Sputtering for Lining and Filling Trenches and Vias", Semiconductor Int'l, Feb. 1996, pp. 99-101.

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