Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1985-10-15
1987-12-29
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Multizone chamber
118724, 118725, C23C 1624
Patent
active
047153172
ABSTRACT:
A method for production of polycrystalline silicon, comprising: heating a deposition substrate in a reaction vessel of metal, bringing a gaseous silicon hydride close to said substrate, decomposing said silicon hydride, and producing to deposit silicon on the substrate, while the wall of said vessel is regulated in temperature at levels of, approximately, 100.degree. to 450.degree. C. simultaneously with a decrease of 100.degree. to 700.degree. C. from the temperature of said substrate and an apparatus for production of polycrystalline silicon, comprising: a reaction vessel of metallic material closed with a detachable lid, an inlet and an outlet for gas connected to said vessel, a jacket arranged over the substantial part of said vessel to provide an interspace between the jacket and vessel, a closed circuit for a gas consisting partly of said interspace, a two-way temperature controlling means for heating and cooling the gas provided on the circuit, and a deposition substrate of electrical conductive material extending in the vessel axially from the lid.
REFERENCES:
patent: 3147141 (1964-09-01), Ishizuka
patent: 3335697 (1967-08-01), Bischoff
patent: 4550684 (1985-11-01), Mahawili
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