Method for producing nitride semiconductor, semiconductor...

Details Method for producing nitride semiconductor, semiconductor... Method for producing nitride semiconductor, semiconductor...

2006-01-24

2006-01-24

Kennedy, Jennifer M. (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S094000, C438S167000, C438S172000, C438S028000

Reexamination Certificate

active

06989287

ABSTRACT:
A method for producing a nitride semiconductor comprising growing at least first to third nitride semiconductor layers on a substrate; said first nitride semiconductor layer being grown at 400–600° C.; and said second and third nitride semiconductor layers being grown on said first nitride semiconductor layer at 700–1,300° C. after heat-treating said first nitride semiconductor layer at 700–1,300° C.; used as a carrier gas supplied near said substrate together with a starting material gas being a hydrogen
itrogen mixture gas containing 63% or more by volume of hydrogen during growing said second nitride semiconductor layer, and a hydrogen
itrogen mixture gas containing 50% or more by volume of nitrogen during growing said third nitride semiconductor layer; and said second nitride semiconductor layer being formed to a thickness of more than 1 μm.

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patent: 2004/0061119 (2004-04-01), Inoue et al.
patent: 04-297023 (1992-10-01), None
patent: 8-8217 (1996-01-01), None

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