Method for producing nitride monocrystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Liquid phase epitaxial growth

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C117S073000, C117S952000

Reissue Patent

active

RE040718

ABSTRACT:
The inventive method exploits the fact that in solutions or melts which contain certain organic substances, small nitride crystallites consisting of GaN or AlN are formed by thermal reaction and decomposition. A vessel containing the melt is kept at a first temperature T1. In the vessel is a substrate nucleus of be nitride to be formed, which is heated to second temperature T2through the input of energy, where T2>T1. Epitaxial growth from the melt then takes place on the surface of the substrate nucleus. The energy input can be carried out in different ways.

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