Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Liquid phase epitaxial growth
Reissue Patent
2000-02-01
2009-06-09
Kunemund, Robert M (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Liquid phase epitaxial growth
C117S073000, C117S952000
Reissue Patent
active
RE040718
ABSTRACT:
The inventive method exploits the fact that in solutions or melts which contain certain organic substances, small nitride crystallites consisting of GaN or AlN are formed by thermal reaction and decomposition. A vessel containing the melt is kept at a first temperature T1. In the vessel is a substrate nucleus of be nitride to be formed, which is heated to second temperature T2through the input of energy, where T2>T1. Epitaxial growth from the melt then takes place on the surface of the substrate nucleus. The energy input can be carried out in different ways.
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Nutt, Rodger W., “Synthesis and Characterization of (Trimethylsilyl)amino)-and (Methyl(trimethylsilyl)amino) gallium Dichloride”, American Chemical Siciety 1985, pp. 159-164.
Riedel, R., “Bis (dichlor-N-trimethylsilyl)cycloaminoalan Kristallstruktur und thermscher abbau zu Aluminiumnitrd”, Z. anor. Allg. Chem. 603 (1991)p. 119-127 , Stuttgart.
Fish & Richardson P.C.
Kunemund Robert M
Osram Opto Semiconductors GmbH
Song Matthew J
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