Method for producing neutron doped silicon having controlled dop

Induced nuclear reactions: processes – systems – and elements – Nuclear transmutation – By neutron bombardment

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

G21G 106

Patent

active

043483518

ABSTRACT:
A method for controlling dopant variation in neutron silicon is provided wherein the selection of undoped single crystal silicon for neutron transmutation doping is based upon certain criteria, for example, a maximum dopant difference which depends only on the desired uniformity of the neutron doped material and a maximum average dopant concentration which is a function of the homogeneity of both the undoped single crystal silicon and the neutron doped product. The results achievable from using the method for controlling dopant variation in the neutron doped silicon provides uniformity of the neutron doped product determinable by the correct choice of dopant difference and dopant factor, and that the doping precision for the radiated silicon does not depend on the doping factor.

REFERENCES:
patent: 3733222 (1973-05-01), Schiller
patent: 3769693 (1973-11-01), Cates et al.
patent: 3967982 (1976-07-01), Arndt et al.
patent: 4027051 (1977-05-01), Reuschel et al.
patent: 4119441 (1978-10-01), Haas et al.
patent: 4129463 (1978-12-01), Cleland et al.
IEEE Trans. on Electron Devices, vol. ED-23, No. 8, Aug. 1976, pp. 797-802, Janus et al.
Nucleonics, 4/64, vol. 22, No. 4, pp. 62-65, Klahr et al.
J. of the Electrochemical Soc., vol. 108, No. 2, pp. 171-176, Tanenbaum et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for producing neutron doped silicon having controlled dop does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing neutron doped silicon having controlled dop, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing neutron doped silicon having controlled dop will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1341880

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.