Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Patent
1995-08-03
1997-08-05
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
117 84, 423446, 4272556, C30B 2502
Patent
active
056538006
ABSTRACT:
A method of making n-type semiconducting diamond is disclosed, which is doped with boron-10 at the time of diamond formation and bombarded with neutrons for in-situ conversion of boron-10 to lithium-7, while filtering the neutrons from high energy components during irradiation.
REFERENCES:
patent: 3630679 (1971-12-01), Angus
patent: 5001452 (1991-03-01), Imai et al.
patent: 5051785 (1991-09-01), Beetz, Jr. et al.
patent: 5099296 (1992-03-01), Mort et al.
patent: 5147687 (1992-09-01), Garg et al.
patent: 5186973 (1993-02-01), Garg et al.
patent: 5202571 (1993-04-01), Hirabayashi et al.
patent: 5210431 (1993-05-01), Kimoto et al.
patent: 5254862 (1993-10-01), Kalyankjumar et al.
patent: 5373171 (1994-12-01), Imai et al.
Austin, I..G., "Electrical and Optical Properties of a Semiconducting Diamond" Proc. Phys. Soc. London B69 (1956), pp. 329-338.
Bezrukov, G.N. et al., "Some Electrical and Optical Properties of Synthetic Semiconducting Diamonds Doped with Boron" Soviet Physics--Semiconductors vol. 4, No. 4, (Oct. 1970) pp. 587-590.
Collins, A.T. et al, "The Nature of the Acceptor Centre in Semiconducting Diamond" J. Physics C: Solid St. Physics vol. 4 (1971) pp. 1789-1800.
Geis, M.W. et al., "High-Temperature Point-Contact Transistors and Schottky Diodes Formed on Synthetic Boron-Doped Diamond" IEEE Electron Device Letters vol. EDL-8, No. 8 (Aug. 1987) pp. 341-343.
Gildenblat, G. et al., "High-Temperature Thin-Film Diamond Field-Effect Transistor Fabricated Using a Selective Growth Method" IEEE Electron Device letters vol. 12, No. 2 (Feb. 1991) pp. 37-39.
Hauser, J.J. et al., "Hopping Conductivity in Implanted Amorphous Diamond, or How to Ruin a Perfectly Good Diamond" Solid State Communications vol. 18 (1976) pp. 789-790.
Morhange, J. et al., "Study of Defects Introduced by Ion Implantation in Diamond" Japanese Journal of Applied Physics vol. 14, No. 4 (Apr. 1975) pp. 544-548.
Shiomi, H, et al., "Electrical Characteristics of Metal Contacts to Boron-Doped Diamond Epitaxial Film" Japanese Journal of Applied Physics vol. 28, No. 5, (May 1989) pp. 758-762.
Tsai, W. et al., "Diamond MESFET Using Ultrashallow RTP Boron Doping" IEEE Electron Device Letters vol. 12, No. 4 (Apr. 1991) pp. 157-159.
Vavilov, V.S. et al., "Implantation of Antimony Ions Into Diamond" Soviet Physics--Semiconductors vol. 6, No. 12, (Jun. 1973) pp. 1998-2002.
Vavilov, V.S. et al., "Conductivity of Diamond Doped by Implantation of Phosphorus Ions" Sov. Phys. Semicond. vol. 9, No. 8 pp. 962-964.
Vavilov, V.S. et al., "Electrical Properties of Diamond Doped by Implantation of Lithium Ions" Sov. Phys. Semicond. vol. 13, No. 6, pp. 635-638.
Vavilov, V.S. et al., "Ion Implantation Into Diamond" Radiation Effects vol. 37 (1978) pp. 229-236.
Vishnevskii, A.S. et al., "Electrical Conductivity of Synthetic Diamond Crystals" Sov. Phys. Semicond. vol. 11, No. 10 (Oct. 1977) pp. 1186-1187.
Vishnevskii, A.S. et al., "Electrical Conductivity of Heavily Doped P-Type Diamond" Sov. Phys. Semicond. vol. 15, No. 6 (Jun. 1981) pp. 659-661.
Wedepohl, P.T., "Electrical and Optical Properties of Type IIb Diamonds" Proc. Phys. Soc. 70B (1957) pp. 177-185.
Evans Paul S.
Karumidze G. S.
Kucherov R. Ya.
Kucherov Yan R.
Shavelashvili Shota Shalvovich
Breneman R. Bruce
ENECO, Inc.
Evans Paul S.
Garrett Felisa
LandOfFree
Method for producing N-type semiconducting diamond does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for producing N-type semiconducting diamond, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing N-type semiconducting diamond will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1071833