Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2006-11-14
2006-11-14
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S678000, C438S749000
Reexamination Certificate
active
07135414
ABSTRACT:
Disclosed is a method for producing a multicrystalline silicon substrate for solar cells comprising: a metal deposition step for depositing such metal particles as platinum and silver on the surface of the substrate by electroless-plating chloroplatinic acid or silver perchlorate; a boring step for subjecting the substrate surface to etching in a solution containing at least one of hydrofluoric acid and hydrogen peroxide; and a step for removing a stain layer by immersing the substrate into an alkaline solution. A multicrystalline silicon substrate having a lower reflectance is provided at a lower cost.
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P. Gorostiza et al., “First stages of platinum electroless deposition on silicon(100) from hydrogen fluoride solutions studied by AFM,” Thin Solid Films 275 (1996) 12-17.
X. Li et al., “Metal-assisted chemical etching HF/H2O2produces porous silicon,” Applied Physics Letters, vol. 77, No. 16, Oct. 16, 2000.
Matsumura Michio
Tujino Kazuya
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kansai Technology Licensing Organization Co., Ltd.
Picardat Kevin M.
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