Method for producing multicrystalline silicon substrate for...

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

Reexamination Certificate

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C438S678000, C438S749000

Reexamination Certificate

active

07135414

ABSTRACT:
Disclosed is a method for producing a multicrystalline silicon substrate for solar cells comprising: a metal deposition step for depositing such metal particles as platinum and silver on the surface of the substrate by electroless-plating chloroplatinic acid or silver perchlorate; a boring step for subjecting the substrate surface to etching in a solution containing at least one of hydrofluoric acid and hydrogen peroxide; and a step for removing a stain layer by immersing the substrate into an alkaline solution. A multicrystalline silicon substrate having a lower reflectance is provided at a lower cost.

REFERENCES:
patent: 6762134 (2004-07-01), Bohn et al.
patent: 6790785 (2004-09-01), Li et al.
patent: 1 231 649 (2002-08-01), None
patent: 2000-195835 (2000-07-01), None
patent: 2002-334856 (2002-11-01), None
P. Gorostiza et al., “First stages of platinum electroless deposition on silicon(100) from hydrogen fluoride solutions studied by AFM,” Thin Solid Films 275 (1996) 12-17.
X. Li et al., “Metal-assisted chemical etching HF/H2O2produces porous silicon,” Applied Physics Letters, vol. 77, No. 16, Oct. 16, 2000.

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