Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step of heat treating...
Reexamination Certificate
2007-12-11
2007-12-11
Gupta, Yogendra N. (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth with a subsequent step of heat treating...
C117S009000, C117S011000, C117S037000, C117S904000, C117S905000, C117S939000
Reexamination Certificate
active
10729201
ABSTRACT:
In the case of the epitaxial growth according to the prior art, a number o strips often have to be produced in a plane in order to restore an area to be repaired. This leads to overlapping and misorientation of the crystalline structures. In the case of the method according to the invention, the strip is of such a width that no overlapping occurs, since the width is adapted to the contour of the area to be repaired.
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Beck Thomas
Bostanjoglo Georg
Cox Nigel-Philip
Wilkenhöner Rolf
Gupta Yogendra N.
Siemens Aktiengesellschaft
Song Matthew J.
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