Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat
Patent
1998-02-20
2000-02-15
Hitesheu, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
Using heat
4 7, 4904, 4 13, C30B 2504
Patent
active
060247924
ABSTRACT:
In the method for manufacturing monocrystalline structures, parts or workpieces of metallic super-alloys on substrates with a monocrystalline structure or monocrystalline structures, the surface of the substrate is melted with an energy beam of high energy density from an energy source. The material which is to be introduced into the monocrystalline structure is supplied to the melted region of the substrate. The supplied material is completely melted. The energy input with the energy beam is regulated and/or controlled in such a manner that the speed of solidification and the temperature gradient lie in the dendritic crystalline region in the GV diagram, outside the globulitic region.
Bieler Hans-Werner
Gaumann Werner
Kurz Wilfried
Rusterholz Hansjakob
Wagniere Jean-Daniel
Hitesheu Felisa
Sulzer Innotec AG
LandOfFree
Method for producing monocrystalline structures does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for producing monocrystalline structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing monocrystalline structures will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1902534