Method for producing mixed crystal wafer using special temperatu

Details Method for producing mixed crystal wafer using special temperatu Method for producing mixed crystal wafer using special temperatu

1980-12-24

1983-03-29

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148171, 357 16, 357 17, H01L 2120, H01L 21324

Patent

active

043782590

ABSTRACT:
A method of manufacturing a mixed crystal compound semiconductor wafer suitable for the production of LED having a high light output. Upon a monocrystalline substrate of III-V semiconductor material a base layer is epitaxially grown of the same material as the substrate. An initial gradient layer is grown on the base layer having a mixed crystal ratio varying continuously from that of the base layer to a first value at a constant temperature. A combination sublayer is grown on the initial gradient sublayer which includes at least one constant sublayer having a constant crystal mixture ratio and at least one gradient sublayer having a crystal mixture ratio varying continuously between the mixed crystal ratios of its adjacent constant layers.

REFERENCES:
patent: 3224913 (1965-12-01), Ruehrwein
patent: 3441453 (1969-04-01), Conrad et al.
patent: 3493811 (1970-02-01), Ewing
patent: 3696262 (1972-10-01), Antypas
patent: 3748480 (1973-07-01), Coleman
patent: 3862859 (1975-01-01), Ettenberg et al.
patent: 3962716 (1976-06-01), Petroff et al.
patent: 3995303 (1976-11-01), Nahory et al.
patent: 4053920 (1977-10-01), Enstrom
patent: 4088515 (1978-05-01), Blakeslee et al.
patent: 4216484 (1980-08-01), Hasegawa et al.
Ewing et al., "Compositional Inhomogeneitics in GaAs P------Layers" J. Applied Physics, vol. 39, No. 13, Dec. 1968, pp. 5943-5948.

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