Method for producing microscopic passages in a semiconductor bod

Details Method for producing microscopic passages in a semiconductor bod Method for producing microscopic passages in a semiconductor bod

1976-06-21

1978-01-17

Mack, John H.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

20412955, 204224R, C25F 312, C25F 314

Patent

active

040691217

ABSTRACT:
A method for drilling microscopic passages in a semiconductor body.
The semiconductor 1 is incorporated into the anode of an electrolysis installation, one of its faces being in contact with the electrolyte 11 and the other containing a hole injection system. The holes migrate in the electric field from one face to the other; at the latter, dissolution of the semiconductor face in the electrolyte takes place. Gradually, passages are bored through the semiconductor along the trajectories of the holes. In the example, the holes are created photoelectrically in the gaps 2 between the opaque parts 4 applied to the transparent anode contact 3.

REFERENCES:
patent: 3265599 (1966-08-01), Soonpaa
Arora et al., "A New Mesa-Etching Technique for Gallium Arsenide", J. Materials Sci. 8, (1973), p. 611.

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