Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2007-02-13
2007-02-13
Schillinger, Laura M. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
C257S418000, C257S347000
Reexamination Certificate
active
10817346
ABSTRACT:
A method for producing micromechanical structures, in which a functional layer is deposited onto a sacrificial layer, and the sacrificial layer is removed again for the production of at least one mechanical functional element, which is characterized by a surface barrier layer, with which the functional layer begins on the sacrificial layer, and which has a different state from the remaining functional layer, is also removed at least to a considerable part, or, on the functional layer, one layer or a plurality of layers having at least approximately the same properties with respect to stress in the layer or layers such as the surface barrier layer is (are) applied. Additionally, a micromechanical structure having a functional layer in which the functional layer is constructed in such a way that the stresses are neutralized or no stress gradient appears.
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Duenn Christoph
Frey Wilhelm
Kenyon & Kenyon LLP
Robert & Bosch GmbH
Schillinger Laura M.
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