Method for producing material for semiconductor device

Details Method for producing material for semiconductor device Method for producing material for semiconductor device

1987-04-20

1989-05-16

Lechert, Jr., Stephen J.

Powder metallurgy processes

Powder metallurgy processes with heating or sintering

Powder shape or size characteristics

419 33, 419 67, 75228, 420537, 420578, 420590, B22F 100

Patent

active

048308200

ABSTRACT:
A new material for use in the manufacture of semiconductor devices, a method of manufacturing the new material, and a heat radiator structure for a semiconductor device. The material is an aluminum alloy containing 30-60% by weight of Si and the remaining weight % is Al. The method of manufacture includes solidifying molten material into a powder and forming the powder by hot plastic working. The heat radiator structure includes a substrate of envelope material and an Al-Si alloy layer glued to the substrate through a function layer.

REFERENCES:
patent: 4297136 (1987-10-01), Pickens et al.
patent: 4402905 (1983-09-01), Burke et al.
patent: 4619697 (1986-10-01), Hijkata et al.
patent: 4702885 (1987-10-01), Odani et al.

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