Method for producing magnetic memory device

Details Method for producing magnetic memory device Method for producing magnetic memory device

2007-07-24

2007-07-24

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S238000, C438S381000, C257SE21665

Reexamination Certificate

active

11389281

ABSTRACT:
There is provided a magnetic memory device which has a small switching current for a writing line and which has a small variation therein. A method for producing such a magnetic memory device includes: forming a magnetoresistive effect element; forming a first insulating film so as to cover the magnetoresistive effect element; forming a coating film so as to cover the first insulating film; exposing a top face of the magnetoresistive effect element; forming an upper writing line on the magnetoresistive effect element; exposing the first insulating film on a side portion of the magnetoresistive effect element by removing a part or all of the coating film; and forming a yoke structural member so as to cover at least a side portion of the upper writing line and so as to contact the exposed first insulating film on the side portion of the magnetoresistive effect element.

REFERENCES:
patent: 6211090 (2001-04-01), Durlam et al.
patent: 6548849 (2003-04-01), Pan et al.
patent: 6797536 (2004-09-01), Yoda et al.
patent: 7041603 (2006-05-01), Amano et al.

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