Method for producing low dielectric coatings from hydrogen silse

Details Method for producing low dielectric coatings from hydrogen silse Method for producing low dielectric coatings from hydrogen silse

1998-07-10

1999-05-25

Bell, Janyce

Coating processes

Heat decomposition of applied coating or base material

427 58, 427240, 427379, 427387, B05D 302

Patent

active

059068590

ABSTRACT:
This invention pertains to a method of producing low dielectric coatings from hydrogen silsesquioxane resin. The method for producing the coatings comprises applying a film of hydrogen silsesquioxane resin onto a substrate and thereafter curing the film by first heating at a temperature of about 325.degree. C. to 350.degree. C. thereafter heating at a temperature of about 400.degree. C. to 450.degree. C. until the normalized SiH bond density is 50 to 80%. This two step curing process produces films having lower dielectric constant and improved mechanical properties.

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