Method for producing localized patterns

Details Method for producing localized patterns Method for producing localized patterns

2010-09-10

2011-11-01

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Having organic semiconductive component

Reexamination Certificate

active

08048712

ABSTRACT:
A method for producing at least one pattern on a top surface of a support made from a material presenting a first thermal conductivity comprises a step of arranging of a mask made from a material presenting a second thermal conductivity and comprising at least one recess having a shape corresponding to that of the pattern, in contact with a bottom surface of the support, the ratio of the first conductivity over the second conductivity being greater than or equal to 2, or smaller than or equal to ½, throughout the duration of the method. The method further comprises a step of depositing on the top surface a solution comprising a material designed to form the pattern, and a step of evaporating the solution.

REFERENCES:
patent: 2004/0082183 (2004-04-01), Mori
patent: 2005/0112294 (2005-05-01), Masuda et al.
patent: 2006/0057293 (2006-03-01), Sharma et al.
patent: 2007/0232035 (2007-10-01), Ramsdale et al.
patent: WO 2005/112146 (2005-11-01), None
Schaffer et al., “Thermomechanical Lithography: Patern Replication Using a Temperature Gradient Driven Instability,” Advanced Materials, Mar. 17, 2003, pp. 514-517, vol. 15-No. 6.

Affiliated with

Also associated with

Rating

Method for producing localized patterns does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing localized patterns, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing localized patterns will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4310711