Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2005-11-15
2005-11-15
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
active
06964878
ABSTRACT:
The present invention discloses a method for producing an LED (light emitting diode), in which a transparent conductive film is formed between a transparent window and the front surface of a LED epitaxial layer. The transparent conductive film can be oxides, nitrides or fluorides of metals. The transparent conductive film can be preliminarily formed on one of the transparent window and the LED epitaxial layer or both of them by a suitable process, for example, thermal pressure. By involving the transparent conductive film, current spreading is improved and resistance is reduced because of larger cross section areas provided, particularly compared with the conventional spin on glass or polymer adhesives. Additionally, light-emitting efficiency can be improved since the conventional opaque substrate, such as a GaAs substrate.
REFERENCES:
patent: 6207972 (2001-03-01), Chen et al.
Chiu Chi-Ying
Horng Ray-Hua
Huang Shao-Hua
Wu Tung-Hsing
Baxley Charles E.
Coleman W. David
National Chung-Hsing University
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