Method for producing light-emitting diode

Details Method for producing light-emitting diode Method for producing light-emitting diode

1995-05-26

1996-06-25

Picardat, Kevin M.

Fishing, trapping, and vermin destroying

437 23, 437120, 437130, H01L 21265

Patent

active

055299385

ABSTRACT:
A method for producing a light-emitting diode provided with a pn junction of GaP containing nitrogen on an n-type GaP substrate, includes the steps of: forming an n-type GaP layer on the n-type GaP substrate by epitaxial growth by bringing the n-type GaP substrate into contact with an oversaturated melted Ga; forming an n-type GaP:N layer having a low n-type carrier concentration on the n-type GaP layer by epitaxial growth by bringing the melted Ga into contact with NH.sub.3 gas; and forming a p-type GaP:N layer having a carrier concentration almost equal to a carrier concentration of the n-type GaP:N layer on the n-type GaP:N layer.

REFERENCES:
patent: 4154630 (1979-05-01), Diguet et al.
patent: 5063166 (1991-11-01), Mooney et al.
patent: 5164329 (1992-11-01), Moyer et al.
patent: 5284781 (1994-02-01), Satyanarayan et al.
patent: 5407858 (1995-04-01), Yanagisawa et al.

Affiliated with

Also associated with

Rating

Method for producing light-emitting diode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing light-emitting diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing light-emitting diode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2188466